Hummingbird News Desk
GUWAHATI, 5 FEB: In a collaborative effort led by researchers from the Indian Institute of Technology, Guwahati, a breakthrough method for growing a special semiconductor has been achieved. This semiconductor, gallium oxide, holds immense potential for revolutionizing power electronics, particularly in high-power applications such as electric vehicles, high-voltage transmission, traction systems, and industrial automation.
Under the leadership of Dr. Ankush Bag, Assistant Professor at the Department of Electronics and Electrical Engineering and Centre for Nanotechnology at IIT Guwahati, the research team, in conjunction with IIT Mandi and the Institute of Sensor and Actuator Systems at Technical University Wien, has developed an innovative and cost-effective technology for growing ultrawide bandgap semiconducting material.
Power semiconductor devices are the backbone of power electronic systems, serving as efficient switches to regulate incoming power from the grid for end-user applications. Dr. Bag emphasizes the necessity for compound semiconductor materials with an ultra-wide bandgap, particularly for emerging high-power applications.
Traditional materials like Gallium Nitride (GaN) and Silicon Carbide (SiC) have been utilized to enhance power electronic system efficiency. However, limitations in cost, especially for high-power applications, have persisted. The new gallium oxide semiconductor, grown using a customized low-pressure chemical vapor deposition (LPCVD) system, offers a promising alternative.
Dr. Bag highlights the main challenge faced during the research: achieving thin and smooth films of gallium oxide. After rigorous experimentation and optimization, the team successfully incorporated tin to enhance and modulate the conductivity of the semiconductor, resulting in superior quality ultra-wide bandgap compound semiconductors and fabricated two-terminal devices.
A significant aspect of this research lies in the use of a sapphire substrate instead of the common gallium oxide substrates. This deviation enhances cost-effectiveness and thermal performance, addressing concerns regarding the expense and poor thermal conductivity of gallium oxide substrates.
The implications of this breakthrough extend across various industries, including electric vehicles, high voltage transmission, traction systems, and industrial automation. With the ability to function efficiently even at temperatures as high as 200 ºC, this innovation promises to redefine the landscape of power electronics, paving the way for more sustainable and efficient energy management solutions.
As researchers continue to refine and expand upon this technology, the prospect of widespread adoption of gallium oxide semiconductors heralds a new era of enhanced performance and reliability in high-power applications.
Tags: #IITGuwahati #GalliumOxideSemiconductor #HoghPowerElectronics
